The mechanism behind the formation of alloyed ohmic contacts to p-type InP doped in the 1016 cm-3 range has been investigated. Techniques used for – characterising the contacts include the scanning electron microscope (SEM), specific contact resistance measurements, x-ray diffractometry (XRD)e, nergy dispersive x-ray analysis (EDAXa) nd Auger electron spectroscopy (AES).B oth temperature and time of annealing were varied during the study. The results obtained using our annealing procedures indicate that the optimum contact resistance is associated with the formation of an Au-In phase. The atomic percentage of indium increases with increasing annealing temperature whilst that of gold drops. Zinc phases appear only at the higher annealing temperatures used.
Using this Service/Resources:
You are allowed to use the original model papers you will receive in the following ways:
1. As a source for additional understanding of the subject.
2. As a source for ideas for your own research work (if properly referenced).
3. For PROPER paraphrasing (see your university definition of plagiarism and acceptable paraphrase)
4. Direct citing (if referenced properly)
Thank you so much for your respect to the authors copyright.